Infineon Introduces World’s First 300 mm GaN Energy Know-how

Infineon Technologies has developed the world’s first 300 mm gallium nitride (GaN) wafer know-how, marking a big milestone within the energy semiconductor trade. By leveraging its current 300 mm silicon manufacturing infrastructure, Infineon has created a scalable, high-volume manufacturing course of that enhances cost-efficiency.

The 300 mm GaN wafers supply 2.3 occasions extra chips per wafer in comparison with 200 mm wafers, bettering manufacturing effectivity and gadget efficiency. This innovation positions Infineon as a frontrunner within the quickly rising GaN market, which is projected to succeed in a number of billion {dollars} by the top of the last decade.

GaN-based energy semiconductors are gaining traction throughout varied sectors, together with industrial, automotive, client electronics, AI energy provides, photo voltaic inverters, and motor-control programs. GaN know-how affords vital benefits, resembling elevated power effectivity, decreased dimension and weight, and decrease general prices for finish customers. The brand new 300 mm GaN wafers guarantee better provide stability and scalability, making them superb for rising market calls for.

Infineon’s integration of 300 mm GaN wafers into its current silicon manufacturing strains in Villach, Austria, demonstrates the corporate’s experience in each GaN and silicon-based semiconductors. This breakthrough additionally paves the way in which for value parity between GaN and silicon, significantly by way of comparable R DS(on) ranges. Infineon goals to showcase the primary 300 mm GaN wafers on the electronica trade show in November 2024 in Munich.

A technical engineer in Infineon Applied sciences’ cleanroom in Villach, Austria, holds a 300 mm gallium nitride wafer. (Picture: Infineon)

This development reinforces Infineon’s management in energy programs and its dedication to innovation, significantly within the fields of decarbonization and digitalization. The corporate’s strategic concentrate on GaN, alongside silicon and silicon carbide, highlights its place on the forefront of semiconductor know-how.

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